Seeking an Engineer to lead development, testing, and validation activities for next-generation GaN power technologies, including design of experiments, failure analysis, and IP generation within a semiconductor R&D environment.
Key Responsibilities
- Drive GaN power technology development projects and work packages.
- Design and develop test structures for process control and evaluation.
- Perform electrical characterization of devices and screening.
- Conduct and coordinate physical/electrical failure analyses.
- Plan and assess design of experiments and process variation experiments.
- Participate in root cause analysis using 8D/Six Sigma methods.
- Collaborate on technology roadmap and innovation initiatives.
- Generate Intellectual Property based on R&D outcomes.
Required Skills
- Master's degree or higher in Electrical Engineering, Physics, or related field.
- 5+ years in semiconductor testing, process development, or integration.
- Familiarity with fab systems and production processes (Si, SiC, GaN).
- Strong experience in project leadership and cross-functional teamwork.
- Hands-on with GaN HEMT technology is a strong plus.
- Proficient in high-volume manufacturing, reliability, and quality analysis.
- Skilled in structured problem-solving (e.g., 8D, Six Sigma).
- Excellent English communication; German language is an added advantage.
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